2. The third-generation GaN gallium nitride semiconductor material is used, which has the characteristics of high withstand voltage, high frequency, stable performance, the same power, smaller size and lighter weight;
3. This product has overvoltage, overcurrent, overheating, overcharge, balance and other protections;
4. Small and portable, can be folded and stored, and can be easily put into the pocket;
5. Dual-port 65W GaN fast charging, multi-protocol compatible with smart matching fast charging, compatible with PD3.O PD2.0, QC3.0 QC2.0 FCP SCP, AFC, PPS, MTK and other fast charging protocols
Specification:
| General |
|
| Package Weight |
|
